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  ? semiconductor components industries, llc, 2005 october, 2005 ? rev. 0 1 publication order number: emg5dxv5/d EMG2DXV5T1, emg5dxv5t1 preferred devices dual bias resistor transistors npn silicon surface mount transistors with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sot?553 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? moisture sensitivity level: 1 ? available in 8 mm, 7 inch tape and reel ? lead?free solder plating ? pb?free packages are available maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d 230 (note 1) 338 (note 2) 1.8 (note 1) 2.7 (note 2) mw c/w thermal resistance ? junction-to-ambient r  ja 540 (note 1) 370 (note 2) c/w thermal resistance ? junction-to-lead r  jl 264 (note 1) 287 (note 2) c/w junction and storage temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 x 1.0 inch pad sot?553 case 463b preferred devices are recommended choices for future use and best overall value. npn silicon bias resistor transistors marking diagram xx = device code xx= uf (emg5) up (emg2) m = date code  = pb?free package xx m   http://onsemi.com 1 5 1 5 (4) r1 r2 r1 (3) (1) (2) (5) r2 dt r2 dt r1 see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information (note: microdot may be in either location)
EMG2DXV5T1, emg5dxv5t1 http://onsemi.com 2 device marking and resistor values device package marking r1 (k) r2 (k) EMG2DXV5T1 sot?553 up 47 47 emg5dxv5t1 sot?553 uf 10 47 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (q1 & q2) collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current (v eb = 6.0 v, i c = 0)EMG2DXV5T1 emg5dxv5t1 i ebo ? ? ? ? 0.1 0.2 madc collector-base breakdown voltage (i c = 10  a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (q1 & q2) (note 3) dc current gain (v ce = 10 v, i c = 5.0 ma) EMG2DXV5T1 emg5dxv5t1 h fe 80 80 140 140 ? ? collector-emitter saturation voltage (ic = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k  ) EMG2DXV5T1 (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k  ) emg5dxv5t1 v ol ? ? ? ? 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k  ) v oh 4.9 ? ? vdc input resistor EMG2DXV5T1 emg5dxv5t1 r 1 32.9 7.0 47 10 61.1 13 k  resistor ratio EMG2DXV5T1 emg5dxv5t1 r 1 /r 2 0.8 0.17 1.0 0.21 1.2 0.25 3. pulse test: pulse width < 300  s, duty cycle < 2.0% figure 1. derating curve 350 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) r  ja = 370 c/w 250 p d , power dissipation (mw) 300
EMG2DXV5T1, emg5dxv5t1 http://onsemi.com 3 typical electrical characteristics ? EMG2DXV5T1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =?25 c 75 c 25 c figure 3. dc current gain figure 4. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 5. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 6. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volt s v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =?25 c t a =?25 c
EMG2DXV5T1, emg5dxv5t1 http://onsemi.com 4 typical electrical characteristics ? emg5dxv5t1 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 7. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 8. dc current gain 1 10 100 i c , collector current (ma) figure 9. output capacitance figure 10. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 11. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 ?25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c t a =?25 c 25 c 75 c i c /i b = 10 75 c 25 c t a =?25 c v o = 5 v v o = 0.2 v t a =?25 c 25 c 75 c
EMG2DXV5T1, emg5dxv5t1 http://onsemi.com 5 typical applications for npn brts load +12 v figure 12. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from  p or other logic +12 v figure 13. open collector inverter: inverts the input signal figure 14. inexpensive, unregulated current source
EMG2DXV5T1, emg5dxv5t1 http://onsemi.com 6 device ordering information device package shipping ? EMG2DXV5T1 sot?553 4000 / tape & reel EMG2DXV5T1g sot?553 (pb?free) 4000 / tape & reel emg2dxv5t5 sot?553 8000 / tape & reel emg2dxv5t5g sot?553 (pb?free) 8000 / tape & reel emg5dxv5t1 sot?553 4000 / tape & reel emg5dxv5t1g sot?553 (pb?free) 4000 / tape & reel emg5dxv5t5 sot?553 8000 / tape & reel emg5dxv5t5g sot?553 (pb?free) 8000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
EMG2DXV5T1, emg5dxv5t1 http://onsemi.com 7 package dimensions sot?553 xv5 suffix 5?lead package case 463b?01 issue b e m 0.08 (0.003) x b 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 1.35 0.0531 0.5 0.0197  mm inches  scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.50 0.55 0.60 0.020 inches b 0.17 0.22 0.27 0.007 c d 1.50 1.60 1.70 0.059 e 1.10 1.20 1.30 0.043 e 0.50 bsc l 0.10 0.20 0.30 0.004 0.022 0.024 0.009 0.011 0.063 0.067 0.047 0.051 0.008 0.012 nom max 1.50 1.60 1.70 0.059 0.063 0.067 h e 0.08 0.13 0.18 0.003 0.005 0.007 0.020 bsc on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 emg5dxv5/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.


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